Trans MOSFET N-CH 55V 61A 3Pin2+Tab DPAK Tube
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
额定电压DC 55.0 V
额定电流 61.0 A
漏源极电阻 14 mΩ
极性 N-Channel
耗散功率 120 W
产品系列 IRLR3915
阈值电压 3 V
漏源极电压Vds 55 V
漏源击穿电压 55.0 V
连续漏极电流Ids 30.0 A
上升时间 51 ns
输入电容Ciss 1870pF @25VVds
额定功率Max 120 W
下降时间 100 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRLR3915PBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STD35NF06LT4 意法半导体 | 功能相似 | IRLR3915PBF和STD35NF06LT4的区别 |