INFINEON IPB083N10N3GATMA1 晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V
OptiMOS™3 功率 MOSFET，100V 及以上
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB083N10N3GATMA1, 80 A, Vds=100 V, 3引脚 D2PAK TO-263封装
得捷:
MOSFET N-CH 100V 80A D2PAK
贸泽:
MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
艾睿:
Make an effective common gate amplifier using this IPB083N10N3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 125000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes optimos 3 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
TME:
Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO263-3
Verical:
Trans MOSFET N-CH 100V 80A Automotive 3-Pin2+Tab D2PAK T/R
Newark:
# INFINEON IPB083N10N3GATMA1 MOSFET Transistor, N Channel, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V
额定功率 125 W
通道数 1
针脚数 3
漏源极电阻 0.0072 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 2.7 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 80A
上升时间 42 ns
输入电容Ciss 2990pF @50VVds
下降时间 8 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 125000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-3
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Uninterruptable power supplies UPS, Or-ing switches and circuit breakers in 48V systems, Class D audio amplifiers, Synchronous rectification for AC-DC SMPS, Isolated DC-DC converters telecom and datacom systems
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17