IPD70P04P409ATMA1概述
晶体管, MOSFET, P沟道, -73 A, -40 V, 0.0064 ohm, -10 V, 3 V
Summary of Features:
- .
- P-channel - Normal Level - Enhancement mode
- .
- AEC qualified
- .
- MSL1 up to 260°C peak reflow
- .
- 175°C operating temperature
- .
- Green package RoHS compliant
- .
- 100% Avalanche tested
Benefits:
- .
- No charge pump required for high side drive.
- .
- Simple interface drive circuit
- .
- World"s lowest RDSon at 40V
- .
- Highest current capability
- .
- Lowest switching and conduction power losses for highest thermal efficiency
- .
- Robust packages with superior quality and reliability
- .
- Standard packages TO-252, TO-263, TO-220, TO-262
IPD70P04P409ATMA1中文资料参数规格
技术参数
针脚数 3
漏源极电阻 0.0064 Ω
极性 P-CH
耗散功率 75 W
阈值电压 3 V
漏源极电压Vds 40 V
连续漏极电流Ids 73A
上升时间 12 ns
输入电容Ciss 4810pF @25VVds
下降时间 31 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 75W Tc
封装参数
安装方式 Surface Mount
引脚数 3
封装 TO-252-3-313
外形尺寸
封装 TO-252-3-313
物理参数
工作温度 -55℃ ~ 175℃
其他
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 High-Side MOSFETs for motor bridges half-bridges, H-bridges, 3-phase-motors, Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump
符合标准
RoHS标准
含铅标准 无铅
海关信息
ECCN代码 EAR99
IPD70P04P409ATMA1引脚图与封装图 
在线购买IPD70P04P409ATMA1