IPD034N06N3GATMA1

IPD034N06N3 系列 60 V 3.4 mOhm N沟道 OptiMOSTM3 功率-晶体管 -PG-TO-252-3

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 60V 100A TO252-3

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPD034N06N3GATMA1, 100 A, Vds=60 V, 3引脚 DPAK TO-252封装

e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 100 A, 0.0028 ohm, TO-252 DPAK, 表面安装

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPD034N06N3GATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 167000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

安富利:
Trans MOSFET N-CH 60V 100A 3-Pin2+Tab TO-252

Chip1Stop:
Trans MOSFET N-CH 60V 100A 3-Pin2+Tab TO-252 T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3

Verical:
Trans MOSFET N-CH 60V 100A Automotive 3-Pin2+Tab DPAK T/R

Newark:
MOSFET Transistor, N Channel, 100 A, 60 V, 0.0028 ohm, 10 V, 3 V