Trans MOSFET N-CH 55V 62A 3Pin2+Tab DPAK Tube
**N-Channel Power MOSFET 60A to 79A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH 55V 62A 3-Pin2+Tab DPAK Tube
Verical:
Trans MOSFET N-CH 55V 62A 3-Pin2+Tab DPAK Tube
Newark:
The IRFR48ZPBF is a 55V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
额定电压DC 55.0 V
额定电流 62.0 A
漏源极电阻 11 mΩ
极性 N-Channel
耗散功率 91 W
产品系列 IRFR48Z
输入电容 1720pF @25V
漏源极电压Vds 55 V
连续漏极电流Ids 62.0 A
上升时间 61.0 ns
输入电容Ciss 1720pF @25VVds
额定功率Max 91 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 10.41 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC