IRF9530NSPBF

-100V,-14A,200mΩ,P沟道功率MOSFET

**P-Channel Power MOSFET over 8A, Infineon**

Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

艾睿:
Trans MOSFET P-CH 100V 14A 3-Pin2+Tab D2PAK Tube

Verical:
Trans MOSFET P-CH 100V 14A 3-Pin2+Tab D2PAK Tube

Newark:
The IRF9530NSPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

力源芯城:
-100V,-14A,200mΩ,P沟道功率MOSFET