Trans MOSFET N-CH 55V 61A 3Pin3+Tab IPAK Tube
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
额定电压DC 55.0 V
额定电流 30.0 A
漏源极电阻 17 mΩ
极性 N-Channel
耗散功率 120 W
产品系列 IRLU3915
阈值电压 3 V
输入电容 1870pF @25V
漏源极电压Vds 55 V
连续漏极电流Ids 61.0 A
上升时间 51.0 ns
输入电容Ciss 1870pF @25VVds
额定功率Max 120 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.73 mm
高度 6.22 mm
封装 TO-251-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17