N沟道,100V,8.3A,18mΩ@10V
"The IRF7853PbF is designed for AC-DC secondary-side synchronous rectification, isolated medium-power DC-DC applications.
The 100V IRF7853 is also optimized for wide-range communication bus input 36V to 75V primary-side bridge topologies in isolated DC-DC bus converters. The 80V IRF7854 is useful for active ORing and hot-swap applications. All three of the MOSFETs are designed for secondary-side synchronous rectification in 5-19Vout flyback converter and resonant half-bridge applications and are suitable for isolated DC-DC applications as primary-side switches in forward or push-pull topologies for 18-36Vin isolated DC-DC converters.
Together with IRs low-voltage MOSFETs and controller ICs, these mid-range MOSFETs form secondary-side chipsets for medium-power, converter applications. In addition, when combined with the SmartRectifierTM IR1167 in AC-DC power supplies such as laptop adaptors, for example, these new SO-8 devices can replace two of their large TO-220 MOSFET counterparts and their associated heatsinks, improving overall system efficiency by as much as 1%. "
"* Primary Side Switch in Bridge Topology in Universal Input 36-75Vin Isolated DC-DC Converters
* Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters
* Secondary Side Synchronous Rectification Switch for 15Vout
* Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications
**Benefits**
* Low Gate to Drain Charge to Reduce Switching Losses
* Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
* Fully Characterized Avalanche Voltage"
漏源极电阻 18 mΩ
极性 N-Channel
耗散功率 2.5 W
产品系列 IRF7853
阈值电压 4.9 V
输入电容 1640pF @25V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 8.30 A
输入电容Ciss 1640pF @25VVds
额定功率Max 2.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 SO-8
长度 5 mm
高度 1.5 mm
封装 SO-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Cut Tape CT
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17