N沟道 55V 42A
**N-Channel Power MOSFET over 100A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
得捷:
IRFR1010 - 12V-300V N-CHANNEL PO
立创商城:
N沟道 55V 42A
艾睿:
Trans MOSFET N-CH Si 55V 91A 3-Pin2+Tab DPAK Tube
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 55V; RDSON 5.8Milliohms; ID 42A; D-Pak TO-252AA; -55deg
Verical:
Trans MOSFET N-CH 55V 91A 3-Pin2+Tab DPAK Tube
DeviceMart:
MOSFET N-CH 55V 42A DPAK
额定电压DC 55.0 V
额定电流 42.0 A
漏源极电阻 7.5 mΩ
极性 N-Channel
耗散功率 140 W
产品系列 IRFR1010Z
输入电容 2840pF @25V
漏源极电压Vds 55 V
漏源击穿电压 55 V
连续漏极电流Ids 42.0 A
上升时间 76.0 ns
输入电容Ciss 2840pF @25VVds
额定功率Max 140 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC