IPD90P03P404ATMA1

INFINEON  IPD90P03P404ATMA1  晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0036 ohm, -10 V, -3 V

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

得捷:
MOSFET P-CH 30V 90A TO252-3

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET IPD90P03P404ATMA1, 90 A, Vds=30 V, 3引脚 DPAK TO-252封装

贸泽:
MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPD90P03P404ATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 137000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology.

安富利:
Trans MOSFET P-CH 30V 90A 3-Pin2+Tab TO-252

Verical:
Trans MOSFET P-CH 30V 90A Automotive 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  IPD90P03P404ATMA1  MOSFET Transistor, P Channel, -90 A, -30 V, 0.0036 ohm, -10 V, -3 V

Win Source:
MOSFET P-CH 30V 90A TO252-3 / P-Channel 30 V 90A Tc 137W Tc Surface Mount PG-TO252-3-11