INFINEON IPB123N10N3GATMA1 晶体管, MOSFET, N沟道, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V
OptiMOS™3 功率 MOSFET，100V 及以上
得捷:
MOSFET N-CH 100V 58A D2PAK
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB123N10N3GATMA1, 58 A, Vds=100 V, 3引脚 D2PAK TO-263封装
贸泽:
MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 58 A, 0.0107 ohm, TO-263, 表面安装
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPB123N10N3GATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 94000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
TME:
Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Verical:
Trans MOSFET N-CH 100V 58A Automotive 3-Pin2+Tab D2PAK T/R
Newark:
# INFINEON IPB123N10N3GATMA1 MOSFET Transistor, N Channel, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V
力源芯城:
100V,58A,12.3mΩ,N沟道功率MOSFET
额定功率 94 W
通道数 1
针脚数 3
漏源极电阻 0.0107 Ω
极性 N-Channel
耗散功率 94 W
阈值电压 2.7 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 58A
上升时间 8 ns
输入电容Ciss 1880pF @50VVds
下降时间 5 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 94 W
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-3
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Synchronous rectification for AC-DC SMPS, Isolated DC-DC converters telecom and datacom systems, 工业, Industrial, 音频, 车用, 电机驱动与控制, Class D audi, Automotive, Audio, Or-ing switches and circuit breakers in 48V systems, 电源管理, Motor Drive & Control, Uninterruptable power supplies UPS
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17