N沟道,55V,29A,40mΩ@10V
Description
Fifth Generation HEXFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
l Advanced Process Technology
l Surface Mount IRFZ34NS
l Low-profile through-hole IRFZ34NL
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
额定电压DC 55.0 V
额定电流 29.0 A
漏源极电阻 40 mΩ
极性 N-Channel
耗散功率 3.8 W
产品系列 IRFZ34NS
阈值电压 4 V
漏源极电压Vds 55 V
漏源击穿电压 55.0 V
连续漏极电流Ids 29.0 A
上升时间 49.0 ns
输入电容Ciss 700pF @25VVds
额定功率Max 3.8 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRFZ34NSPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STB35NF10T4 意法半导体 | 功能相似 | IRFZ34NSPBF和STB35NF10T4的区别 |
STB36NF06LT4 意法半导体 | 功能相似 | IRFZ34NSPBF和STB36NF06LT4的区别 |