N沟道,55V,75A,4.7mΩ@10V
**N-Channel Power MOSFET 60A to 79A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH 55V 75A 3-Pin3+Tab TO-220AB Tube
Verical:
Trans MOSFET N-CH 55V 75A 3-Pin3+Tab TO-220AB Tube
额定电压DC 55.0 V
额定电流 75.0 A
漏源极电阻 4.7 mΩ
极性 N-Channel
耗散功率 330 W
产品系列 IRF2805
输入电容 5110pF @25V
漏源极电压Vds 55 V
漏源击穿电压 55 V
连续漏极电流Ids 75.0 A
上升时间 120 ns
输入电容Ciss 5110pF @25VVds
额定功率Max 330 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
高度 16.51 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRF2805PBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STP80NF55-06 意法半导体 | 功能相似 | IRF2805PBF和STP80NF55-06的区别 |
IRFZ14PBF 威世 | 功能相似 | IRF2805PBF和IRFZ14PBF的区别 |
PHP54N06T,127 恩智浦 | 功能相似 | IRF2805PBF和PHP54N06T,127的区别 |