Trans MOSFET P-CH 55V 19A 3Pin3+Tab TO-262 Tube
**HEXFET® N-Channel Power MOSFET up to 50A, Infineon**
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
艾睿:
Trans MOSFET P-CH 55V 19A 3-Pin3+Tab TO-262 Tube
Allied Electronics:
MOSFET, P-CHANNEL, -55V, -19A, 100 MOHM, 23.3 NC QG, TO-262
Verical:
Trans MOSFET P-CH 55V 19A 3-Pin3+Tab TO-262 Tube
Newark:
The IRF9Z34NLPBF is a P-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This low-profile through-hole transistor benefits, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
DeviceMart:
MOSFET P-CH 55V 19A TO-262
额定电压DC -55.0 V
额定电流 -19.0 A
通道数 1
漏源极电阻 0.1 Ω
极性 P-Channel
耗散功率 68 W
产品系列 IRF9Z34NL
漏源极电压Vds 55 V
漏源击穿电压 -55.0 V
连续漏极电流Ids -19.0 A
上升时间 55.0 ns
输入电容Ciss 620pF @25VVds
额定功率Max 3.8 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-262-3
长度 10.67 mm
高度 9.65 mm
封装 TO-262-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free