Trans MOSFET N-CH 100V 63A 3Pin3+Tab IPAK Tube
**N-Channel Power MOSFET 60A to 79A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH 100V 63A 3-Pin3+Tab IPAK Tube
Allied Electronics:
MOSFET, N Ch., Automotive, 100V, 63A, 14 MOHM, 34 NC QG, I-PAK, Pb-Free
Verical:
Trans MOSFET N-CH 100V 63A 3-Pin3+Tab IPAK Tube
DeviceMart:
MOSFET N-CH 100V 42A IPAK
漏源极电阻 16 mΩ
极性 N-Channel
耗散功率 140 W
产品系列 IRLU3110Z
阈值电压 2.5 V
输入电容 3980pF @25V
漏源极电压Vds 100 V
输入电容Ciss 3980pF @25VVds
额定功率Max 140 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.73 mm
高度 6.22 mm
封装 TO-251-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17
ECCN代码 EAR99