MOSFET, Power; N-Ch; VDSS 30V; RDSON 0.006Ω; ID 140A; TO-220AB; PD 200W; VGS +/-16V
**N-Channel Power MOSFET over 100A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH 30V 140A 3-Pin3+Tab TO-220AB Tube
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 30V; RDSON 0.006Ohm; ID 140A; TO-220AB; PD 200W; VGS +/-16V
Verical:
Trans MOSFET N-CH 30V 140A 3-Pin3+Tab TO-220AB Tube
DeviceMart:
Vds = 30V, Rds = 0,006 ohms, Id = 140A, N채널, TO-220
额定电压DC 30.0 V
额定电流 140 A
通道数 1
漏源极电阻 0.009 Ω
极性 N-Channel
耗散功率 200 W
产品系列 IRL3803
输入电容 5000pF @25V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 140 A
上升时间 230 ns
输入电容Ciss 5000pF @25VVds
额定功率Max 200 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.54 mm
高度 15.24 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
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