IKP15N60TXKSA1

INFINEON  IKP15N60TXKSA1  单晶体管, IGBT, 通用, 30 A, 2.05 V, 130 W, 600 V, TO-220, 3 引脚

TrenchStop IGBT ，600 和 650V

一系列 Infineon IGBT 晶体管，集电极-发射器电压额定值为 600 和 650V，采用 TrenchStop™ 技术。该系列包括带有集成高速、快速恢复反并联二极管的设备。

• 集电极-发射器电压范围为 600 至 650V

• 极低的 VCEsat

• 低断开损耗

• 短尾线电流

• 低 EMI

• 最大接点温度为 175°C

得捷:
IGBT 600V 30A 130W TO220-3

欧时:
Infineon IGBT, IKP15N60TXKSA1, 3引脚, TO-220封装, Vce=600 V, 26 A, ±20V

贸泽:
IGBT 晶体管 Infineon"s TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod

艾睿:
Trans IGBT Chip N-CH 600V 26A 130000mW Automotive 3-Pin3+Tab TO-220AB Tube

Verical:
Trans IGBT Chip N-CH 600V 26A 130000mW Automotive 3-Pin3+Tab TO-220AB Tube

Newark:
IGBT Single Transistor, GENERAL PURPOSE, 30 A, 2.05 V, 130 W, 600 V, TO-220, 3