INFINEON IPB600N25N3GATMA1 晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
OptiMOS™3 功率 MOSFET，100V 及以上
得捷:
MOSFET N-CH 250V 25A D2PAK
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB600N25N3GATMA1, 25 A, Vds=250 V, 3引脚 D2PAK TO-263封装
贸泽:
MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
e络盟:
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
艾睿:
This IPB600N25N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 136000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
Chip1Stop:
Trans MOSFET N-CH 250V 25A 3-Pin2+Tab TO-263
TME:
Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Verical:
Trans MOSFET N-CH 250V 25A 3-Pin2+Tab D2PAK T/R
Newark:
# INFINEON IPB600N25N3GATMA1 MOSFET Transistor, N Channel, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
Win Source:
MOSFET N-CH 250V 25A D2PAK / N-Channel 250 V 25A Tc 136W Tc Surface Mount PG-TO263-3
额定功率 136 W
针脚数 3
漏源极电阻 0.051 Ω
极性 N-Channel
耗散功率 136 W
阈值电压 3 V
漏源极电压Vds 250 V
连续漏极电流Ids 25A
上升时间 10 ns
输入电容Ciss 1770pF @100VVds
下降时间 8 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 136 W
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.31 mm
宽度 9.45 mm
高度 4.57 mm
封装 TO-263-3
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Lighting, 工业, 照明, Audio, Isolated DC-DC converters, Class D audio amplifiers, Industrial, 电源管理, Power Management, Motor Drive & Control, 电机驱动与控制, Synchronous rectification for AC-DC SMPS, 音频
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17