IPB65R660CFDAATMA1

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IPB65R660CFDAATMA1概述

N沟道 650V 6A

Summary of Features:

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First 650V automotive qualified technology with integrated fast body diode on the market
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Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
.
Low gate charge value Q g
.
Low Q rr at repetitive commutation on body diode & lowQ oss
.
Reduced turn on and turn of delay times
.
Compliant to AEC Q101 standard

Benefits:

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Increased safety margin due to higher breakdown voltage
.
Reduced EMI appearance and easy to design in
.
Better light load efficiency
.
Lower switching losses
.
Higher switching frequency and/or higher duty cycle possible
.
High quality and reliability
IPB65R660CFDAATMA1中文资料参数规格
技术参数

极性 N-CH

耗散功率 62.5 W

漏源极电压Vds 650 V

连续漏极电流Ids 6A

上升时间 8 ns

输入电容Ciss 543pF @100VVds

下降时间 10 ns

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 62.5W Tc

封装参数

安装方式 Surface Mount

封装 TO-263-3

外形尺寸

封装 TO-263-3

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Unidirectional and bidirectional DC-DC converter, HID lighting, Battery charger

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

数据手册

在线购买IPB65R660CFDAATMA1
型号: IPB65R660CFDAATMA1
描述:N沟道 650V 6A

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