N-沟道 150 V 50 A 20 mΩ 23 nC OptiMOS 3 功率 晶体管 - D2PAK
OptiMOS™3 功率 MOSFET,100V 及以上
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB200N15N3GATMA1, 50 A, Vds=150 V, 3引脚 D2PAK TO-263封装
得捷:
MOSFET N-CH 150V 50A D2PAK
艾睿:
This IPB200N15N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 150000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes optimos 3 technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R
TME:
Transistor: N-MOSFET; unipolar; 120V; 45A; 78W; PG-TO263-3
Verical:
Trans MOSFET N-CH 150V 50A Automotive 3-Pin2+Tab D2PAK T/R
额定功率 78 W
极性 N-Channel
耗散功率 150 W
漏源极电压Vds 150 V
连续漏极电流Ids 50A
上升时间 11 ns
输入电容Ciss 1820pF @75VVds
下降时间 6 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 150 W
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.31 mm
宽度 9.45 mm
高度 4.57 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Class D audio amplifiers, Synchronous rectification for AC-DC SMPS, Isolated DC-DC converters telecom and datacom systems, Or-ing switches and circuit breakers in 48V systems
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99