N沟道 55V 42A
**N-Channel Power MOSFET 80A to 99A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
得捷:
MOSFET N-CH 55V 42A IPAK
立创商城:
N沟道 55V 42A
艾睿:
Trans MOSFET N-CH 55V 89A 3-Pin3+Tab IPAK Tube
Allied Electronics:
MOSFET, N Ch., Automotive, 55V, 89A, 8 MOHM, 44 NC QG, I-PAK, Pb-Free
Verical:
Trans MOSFET N-CH 55V 89A 3-Pin3+Tab IPAK Tube
DeviceMart:
MOSFET N-CH 55V 42A I-PAK
额定电压DC 55.0 V
额定电流 42.0 A
漏源极电阻 8 mΩ
耗散功率 130 W
产品系列 IRLU3705Z
输入电容 2900pF @25V
漏源极电压Vds 55 V
连续漏极电流Ids 42.0 A
上升时间 150 ns
输入电容Ciss 2900pF @25VVds
额定功率Max 130 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.73 mm
高度 6.22 mm
封装 TO-251-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free