INFINEON IPL60R385CPAUMA1 功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
CoolMOS™CP 功率 MOSFET
得捷:
MOSFET N-CH 600V 9A 4VSON
立创商城:
N沟道 600V 9A
欧时:
Infineon CoolMOS CP 系列 Si N沟道 MOSFET IPL60R385CPAUMA1, 9 A, Vds=600 V, 4引脚 VSON封装
艾睿:
Make an effective common gate amplifier using this IPL60R385CPAUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 83000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -40 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology.
TME:
Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Verical:
Trans MOSFET N-CH 650V 9A 4-Pin VSON T/R
Newark:
# INFINEON IPL60R385CPAUMA1 Power MOSFET, N Channel, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
额定功率 83 W
针脚数 5
漏源极电阻 0.35 Ω
极性 N-Channel
耗散功率 83 W
阈值电压 3 V
漏源极电压Vds 650 V
连续漏极电流Ids 9A
上升时间 5 ns
输入电容Ciss 790pF @100VVds
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 83 W
安装方式 Surface Mount
引脚数 5
封装 VSON
长度 8.1 mm
宽度 8.1 mm
高度 1.1 mm
封装 VSON
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 Consumer Electronics, 通信与网络, Power Management, 消费电子产品, Communications & Networking, 电源管理
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17