N-CH 650V 10.1A
Description:
CoolMOS™ E6 combines "s experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.
Summary of Features:
Benefits:
Target Applications:
额定功率 83 W
极性 N-CH
耗散功率 83W Tc
漏源极电压Vds 650 V
漏源击穿电压 650 V
连续漏极电流Ids 10.1A
上升时间 7 ns
输入电容Ciss 710pF @100VVds
下降时间 8 ns
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 83W Tc
安装方式 Surface Mount
引脚数 4
封装 VSON-4
长度 8 mm
宽度 8 mm
高度 1.1 mm
封装 VSON-4
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准
含铅标准 无铅