IPP076N12N3GXKSA1概述
晶体管, MOSFET, N沟道, 100 A, 120 V, 0.0065 ohm, 10 V, 3 V
Summary of Features:
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- Excellent switching performance
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- World’s lowest R DSon
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- Very low Q g and Q gd
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- Excellent gate charge x R DSon product FOM
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- RoHS compliant-halogen free
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- MSL1 rated 2
Benefits:
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- Environmentally friendly
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- Increased efficiency
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- Highest power density
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- Less paralleling required
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- Smallest board-space consumption
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- Easy-to-design products
IPP076N12N3GXKSA1中文资料参数规格
技术参数
额定功率 188 W
针脚数 3
漏源极电阻 0.0065 Ω
极性 N-CH
耗散功率 188 W
阈值电压 3 V
漏源极电压Vds 120 V
连续漏极电流Ids 100A
上升时间 50 ns
输入电容Ciss 4990pF @60VVds
下降时间 10 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 188000 mW
封装参数
安装方式 Through Hole
引脚数 3
封装 TO-220-3
外形尺寸
长度 10 mm
宽度 4.4 mm
高度 15.65 mm
封装 TO-220-3
其他
产品生命周期 Active
包装方式 Tube
制造应用 Isolated DC-DC converters telecom and datacom systems, Synchronous rectification for AC-DC SMPS, Class D audio amplifiers, Or-ing switches and circuit breakers in 48V systems
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
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