IPD65R420CFDAATMA1

IPD65R420CFDAATMA1图片1
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IPD65R420CFDAATMA1概述

N沟道 650V 8.7A

Summary of Features:

.
First 650V automotive qualified technology with integrated fast body diode on the market
.
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
.
Low gate charge value Q g
.
Low Q rr at repetitive commutation on body diode & lowQ oss
.
Reduced turn on and turn of delay times
.
Compliant to AEC Q101 standard

Benefits:

.
Increased safety margin due to higher breakdown voltage
.
Reduced EMI appearance and easy to design in
.
Better light load efficiency
.
Lower switching losses
.
Higher switching frequency and/or higher duty cycle possible
.
High quality and reliability
IPD65R420CFDAATMA1中文资料参数规格
技术参数

极性 N-CH

耗散功率 83.3 W

漏源极电压Vds 650 V

连续漏极电流Ids 8.7A

上升时间 7 ns

输入电容Ciss 870pF @100VVds

下降时间 8 ns

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 83.3W Tc

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

长度 6.5 mm

宽度 6.22 mm

高度 2.3 mm

封装 TO-252-3

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 HID lighting, Unidirectional and bidirectional DC-DC converter, Battery charger

符合标准

RoHS标准

含铅标准 无铅

数据手册

在线购买IPD65R420CFDAATMA1
型号: IPD65R420CFDAATMA1
描述:N沟道 650V 8.7A

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