N沟道,55V,81A,12mΩ@10V
**N-Channel Power MOSFET 80A to 99A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH 55V 81A 3-Pin3+Tab TO-247AC Tube
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 55V; RDSON 0.012Ohm; ID 81A; TO-247AC; PD 170W; VGS +/-20V
Jameco:
55V SINGLE N-CHANNEL HEXFETPOWER MOSFET IN A SO-8 PACK
Verical:
Trans MOSFET N-CH 55V 81A 3-Pin3+Tab TO-247AC Tube
额定电压DC 55.0 V
额定电流 81.0 A
漏源极电阻 0.012 Ω
极性 N-Channel
耗散功率 170 W
产品系列 IRFP054N
阈值电压 4 V
输入电容 2900pF @25V
漏源极电压Vds 55 V
漏源击穿电压 55 V
连续漏极电流Ids 81.0 A
上升时间 66.0 ns
输入电容Ciss 2900pF @25VVds
额定功率Max 170 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.87 mm
高度 20.7 mm
封装 TO-247-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRFP054NPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
IRFP054PBF 威世 | 功能相似 | IRFP054NPBF和IRFP054PBF的区别 |