IRF3205ZSPBF 停产 管装
VDSS= 55V
RDSon= 6.5mΩ
ID= 75A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
额定电压DC 55.0 V
额定电流 75.0 A
额定功率 170 W
极性 N-Channel
耗散功率 170 W
产品系列 IRF3205ZS
输入电容 3.45 nF
栅电荷 110 nC
漏源极电压Vds 55 V
连续漏极电流Ids 75.0 A
上升时间 95.0 ns
输入电容Ciss 3450pF @25VVds
额定功率Max 170 W
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
产品生命周期 Active
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRF3205ZSPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STB140NF75T4 意法半导体 | 功能相似 | IRF3205ZSPBF和STB140NF75T4的区别 |
STB140NF55T4 意法半导体 | 功能相似 | IRF3205ZSPBF和STB140NF55T4的区别 |
STB150NF55T4 意法半导体 | 功能相似 | IRF3205ZSPBF和STB150NF55T4的区别 |