单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
CoolMOS™C3 功率 MOSFET
得捷:
MOSFET N-CH 900V 6.9A TO220-FP
欧时:
Infineon CoolMOS C3 系列 Si N沟道 MOSFET IPA90R800C3XKSA1, 6.9 A, Vds=900 V, 3引脚 TO-220FP封装
贸泽:
MOSFET LOW POWER_LEGACY
艾睿:
Create an effective common drain amplifier using this IPA90R800C3XKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 33000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
富昌:
Single N-Channel 900 V 0.8 Ohm 42 nC CoolMOS™ Power Mosfet - TO-220-3FP
Chip1Stop:
Trans MOSFET N-CH 900V 6.9A 3-Pin3+Tab TO-220FP Tube
TME:
Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP
Verical:
Trans MOSFET N-CH 900V 6.9A 3-Pin3+Tab TO-220FP Tube
额定功率 33 W
极性 N-Channel
耗散功率 33 W
输入电容 1100 pF
漏源极电压Vds 900 V
连续漏极电流Ids 6.90 A
上升时间 20 ns
输入电容Ciss 1100pF @100VVds
下降时间 32 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 33 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.65 mm
宽度 4.85 mm
高度 16.15 mm
封装 TO-220-3
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC