IKW08T120FKSA1

INFINEON  IKW08T120FKSA1  单晶体管, IGBT, 通用, 16 A, 2.2 V, 70 W, 1.2 kV, TO-247, 3 引脚

TrenchStop IGBT ，电压 1100 至 1600V

一系列 Infineon 的 IGBT 晶体管，带电压额定值为 1100 至 1600V 的集电极-发射极，采用 TrenchStop™ 技术。该系列包括带集成高速、快速恢复防并联二极管的设备。

• 集电极-发射极电压范围 1100 至 1600V

• 极低 VCEsat

• 低关闭损耗

• 短尾线电流

• 低 EMI

• 最高接点温度 175°C

得捷:
IGBT 1200V 16A TO247-3

立创商城:
IKW08T120FKSA1

欧时:
Infineon IKW08T120FKSA1 N沟道 IGBT, 16 A, Vce=1200 V, 20kHz, 3引脚 TO-247封装

艾睿:
You won&s;t need to worry about any lagging in your circuit with this IKW08T120FKSA1 IGBT transistor from Infineon Technologies. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 70000 mW. This IGBT transistor has an operating temperature range of -40 °C to 150 °C. It is made in a single configuration.

Chip1Stop:
Trans IGBT Chip N-CH 1200V 16A 70000mW 3-Pin3+Tab TO-247 Tube

TME:
Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3

Verical:
Trans IGBT Chip N-CH 1200V 16A 70000mW 3-Pin3+Tab TO-247 Tube

Newark:
# INFINEON  IKW08T120FKSA1  IGBT Single Transistor, General Purpose, 16 A, 2.2 V, 70 W, 1.2 kV, TO-247, 3 Pins