IPB65R280E6ATMA1

IPB65R280E6ATMA1图片1
IPB65R280E6ATMA1图片2
IPB65R280E6ATMA1概述

D2PAK N-CH 700V 13.8A

Description:

CoolMOS™ E6 combines "s experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

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**600V CoolMOS™ E6 is replacement for 600V CoolMOS™ C3**
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**650V CoolMOS™ E6 is replacement for 650V CoolMOS™ C3**

Summary of Features:

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Easy control of switching behavior
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Very high commutation ruggedness 
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Extremely low losses due to very low Figure of Merit R DSON*Q g and E oss
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Easy to use
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Better light load efficiency compared to C3
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Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
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Better price performance in comparison to previous CoolMOS™ generations
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More efficient, more compact, lighter and cooler

Benefits:

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Improved power density
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Improved reliability
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General purpose part can be used in both soft and hard switching topologies
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Better light load effciency
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Improved effciency in hard switching applications
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Improved ease-of-use
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Reduces possible ringing due to pcb layout and package parasitic effects

Target Applications:

 

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Consumer
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Adapter
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eMobility
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PFC stages for server & telecom
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SMPS
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PC power
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Solar
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Lighting
IPB65R280E6ATMA1中文资料参数规格
技术参数

额定功率 104 W

通道数 1

漏源极电阻 280 mΩ

极性 N-CH

耗散功率 104 W

阈值电压 3 V

漏源极电压Vds 650 V

漏源击穿电压 650 V

连续漏极电流Ids 13.8A

上升时间 9 ns

输入电容Ciss 950pF @100VVds

下降时间 9 ns

工作温度Max 150 ℃

工作温度Min 55 ℃

耗散功率Max 104W Tc

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263-3

外形尺寸

长度 10 mm

宽度 9.25 mm

高度 4.4 mm

封装 TO-263-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 无铅

数据手册

在线购买IPB65R280E6ATMA1
型号: IPB65R280E6ATMA1
描述:D2PAK N-CH 700V 13.8A

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