IRF6604TR1

IRF6604TR1图片1
IRF6604TR1概述

Trans MOSFET N-CH 30V 12A 7Pin Direct-FET MQ T/R

Description

The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

• Application Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Low Profile <0.7 mm

• Dual Sided Cooling Compatible

• Compatible with existing Surface Mount Techniques

IRF6604TR1中文资料参数规格
技术参数

漏源极电阻 11.5 Ω

极性 N-Channel

耗散功率 2.30 W

漏源极电压Vds 30 V

漏源击穿电压 30.0 V

连续漏极电流Ids 59.0 A

输入电容Ciss 2270pF @15VVds

额定功率Max 2.3 W

封装参数

引脚数 7

封装 DirectFET™ Isometric MQ

外形尺寸

封装 DirectFET™ Isometric MQ

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IRF6604TR1
型号: IRF6604TR1
制造商: International Rectifier 国际整流器
描述:Trans MOSFET N-CH 30V 12A 7Pin Direct-FET MQ T/R

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