晶体管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
Description:
CoolMOS™ E6 combines "s experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.
Summary of Features:
Benefits:
Target Applications:
额定功率 208 W
通道数 1
针脚数 3
漏源极电阻 0.23 Ω
极性 N-CH
耗散功率 208 W
阈值电压 3 V
漏源极电压Vds 650 V
连续漏极电流Ids 16.1A
输入电容Ciss 950pF @1000VVds
工作温度Max 150 ℃
工作温度Min -55.0 ℃
耗散功率Max 208W Tc
安装方式 Surface Mount
封装 TO-252-3
宽度 6.22 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free