International Rectifier IRG4BC30FD1PBF, N沟道 IGBT 晶体管, 31 A, Vce=600 V, 1 → 8kHz, 3针 TO-220AB封装
**Co-Pack IGBT over 21A, Infineon**
Isolated Gate Bipolar Transistors IGBT from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
得捷:
IGBT, 31A IC, 600V VBRCES, N
艾睿:
Trans IGBT Chip N-CH 600V 31A 3-Pin3+Tab TO-220AB Tube
Allied Electronics:
600V FAST 1-5 KHZ HARD SWITCHING COPACKIGBT IN A TO-220AB
Verical:
Trans IGBT Chip N-CH 600V 31A 3-Pin3+Tab TO-220AB Tube
DeviceMart:
IGBT W/DIODE 600V 31A TO220AB
Win Source:
IGBT, 31A IC, 600V VBRCES, N / IGBT 600 V 31 A 100 W Through Hole TO-220AB
额定电压DC 600 V
额定电流 31.0 A
极性 N-Channel
耗散功率 100 W
产品系列 IRG4BC30FD1
上升时间 24 ns
击穿电压集电极-发射极 600 V
反向恢复时间 46 ns
额定功率Max 100 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
高度 16.41 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17