IPB009N03LGATMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB009N03LGATMA1, 180 A, Vds=30 V, 7引脚 D2PAK TO-263封装

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 30V 180A TO263-7

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB009N03LGATMA1, 180 A, Vds=30 V, 7引脚 D2PAK TO-263封装

e络盟:
INFINEON  IPB009N03LGATMA1  晶体管, MOSFET, N沟道, 180 A, 30 V, 0.7 mohm, 10 V

艾睿:
Increase the current or voltage in your circuit with this IPB009N03LGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 250000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.

安富利:
Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R

Chip1Stop:
Trans MOSFET N-CH 30V 180A 7-Pin6+Tab TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7

Verical:
Trans MOSFET N-CH 30V 180A 7-Pin6+Tab D2PAK T/R