INFINEON IPW60R280C6FKSA1 功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.25 ohm, 10 V, 3 V
CoolMOS™C6/C7 功率 MOSFET
得捷:
MOSFET N-CH 600V 13.8A TO247-3
欧时:
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPW60R280C6FKSA1, 13.8 A, Vds=650 V, 3引脚 TO-247封装
e络盟:
INFINEON IPW60R280C6FKSA1 功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.25 ohm, 10 V, 3 V
艾睿:
Make an effective common source amplifier using this IPW60R280C6FKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 104000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
富昌:
Single N-Channel 600 V 280 mOhm 43 nC CoolMOS™ Power Mosfet - TO-247-3
TME:
Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Verical:
Trans MOSFET N-CH 600V 13.8A 3-Pin3+Tab TO-247 Tube
额定功率 104 W
针脚数 3
漏源极电阻 0.25 Ω
极性 N-Channel
耗散功率 104 W
阈值电压 3 V
漏源极电压Vds 600 V
连续漏极电流Ids 13.8A
上升时间 11 ns
输入电容Ciss 950pF @100VVds
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 104 W
安装方式 Through Hole
引脚数 3
封装 TO-247
长度 16.13 mm
宽度 21.1 mm
高度 5.21 mm
封装 TO-247
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17