INFINEON IPB014N06NATMA1 晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 2.8 V 新
OptiMOS™5 功率 MOSFET
得捷:
MOSFET N-CH 60V 34A/180A TO263-7
欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET IPB014N06NATMA1, 180 A, Vds=60 V, 7引脚 D2PAK TO-263封装
立创商城:
N沟道 60V 180A 34A
e络盟:
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPB014N06NATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
安富利:
Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R
TME:
Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Verical:
Trans MOSFET N-CH 60V 180A 7-Pin6+Tab D2PAK T/R
Newark:
MOSFET, N-CH, 60V, 180A, TO-263-7
额定功率 214 W
针脚数 7
漏源极电阻 0.0012 Ω
极性 N-Channel
耗散功率 214 W
阈值电压 2.8 V
输入电容 7800 pF
漏源极电压Vds 60 V
连续漏极电流Ids 180A
上升时间 18 ns
输入电容Ciss 7800pF @30VVds
下降时间 14 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3W Ta, 214W Tc
安装方式 Surface Mount
引脚数 7
封装 TO-263-7
长度 10.31 mm
宽度 11.05 mm
高度 4.57 mm
封装 TO-263-7
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Synchronous rectification, Isolated DC-DC converters, Or-ing switches
RoHS标准 RoHS Compliant
含铅标准 Lead Free