Trans MOSFET N-CH Si 30V 16A 7Pin Direct-FET ST T/R
* RoHS compliant containing no lead or bormide
* Low Profile <
* Dual Sided Cooling Compatible
* Ultra Low Package Inductance
* Optimized for High Frequency Switching
* Low Conduction and Switching Losses
* Compatible with existing Surface Mount Techniques
艾睿:
Trans MOSFET N-CH Si 30V 16A 7-Pin Direct-FET ST T/R
Allied Electronics:
30V SINGLE N-CHANNEL HEXFET POWER MOSFET, DIRECTFET ST PKG
额定电压DC 30.0 V
额定电流 16.0 A
漏源极电阻 7.1 mΩ
极性 N-Channel
耗散功率 42 W
产品系列 IRF6626
输入电容 2380pF @15V
栅电荷 29.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
连续漏极电流Ids 13.0 A
上升时间 15.0 ns
输入电容Ciss 2380pF @15VVds
额定功率Max 2.2 W
工作温度Max 150 ℃
工作温度Min -40 ℃
安装方式 Surface Mount
封装 DirectFET™ Isometric ST
长度 4.85 mm
高度 0.506 mm
封装 DirectFET™ Isometric ST
工作温度 -40℃ ~ 150℃
产品生命周期 Unknown
包装方式 Cut Tape CT
RoHS标准 RoHS Compliant
含铅标准 Lead Free