IKW30N65H5XKSA1

单晶体管, IGBT, 55 A, 1.65 V, 188 W, 650 V, TO-247, 3 引脚

Summary of Features:

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650V breakthrough voltage

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Compared to ’s best-in-class HighSpeed 3 family

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Factor 2.5 lower Q g

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Factor 2 reduction in switching losses

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200mV reduction in V CEsat

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Co-packed with Infineon’s new Rapid Si-diode technology

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Low C OES/E OSS

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Mild positive temperature coefficient V CEsat

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Temperature stability of V f

Benefits:

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Best-in-class efficiency, resulting in lower junction and

case temperature leading to higher device reliability

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50V increase in the bus voltage possible without compromising

reliability

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Higher power density design

Target Applications:

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Uninterruptible Power Supplies

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Welding