N沟道 40V 75A
**N-Channel Power MOSFET over 100A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
立创商城:
N沟道 40V 75A
得捷:
MOSFET N-CH 40V 75A D2PAK
艾睿:
Trans MOSFET N-CH Si 40V 200A 3-Pin2+Tab D2PAK Tube
Allied Electronics:
MOSFET, N Ch., Automotive, 40V, 200A, 3.1 MOHM, 75 NC QG, D2-PAK, Pb-Free
Verical:
Trans MOSFET N-CH 40V 200A 3-Pin2+Tab D2PAK Tube
漏源极电阻 5.9 mΩ
极性 N-Channel
耗散功率 230 W
产品系列 IRL1404ZS
阈值电压 2.7 V
输入电容 5080pF @25V
漏源极电压Vds 40 V
连续漏极电流Ids 75.0 mA
输入电容Ciss 5080pF @25VVds
额定功率Max 200 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRL1404ZSPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STB120N4LF6 意法半导体 | 功能相似 | IRL1404ZSPBF和STB120N4LF6的区别 |
STB200NF04T4 意法半导体 | 功能相似 | IRL1404ZSPBF和STB200NF04T4的区别 |