Trans MOSFET N-CH 60V 160A 3Pin3+Tab TO-262 Tube
**N-Channel Power MOSFET over 100A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH 60V 160A 3-Pin3+Tab TO-262 Tube
Allied Electronics:
IRFSL3306PBF N-channel MOSFET Module, 160 A, 60 V, 3-Pin TO-262
额定电压DC 60.0 V
额定电流 160 A
漏源极电阻 4.2 mΩ
耗散功率 230 W
产品系列 IRFSL3306
输入电容 4520pF @50V
栅电荷 120 nC
漏源极电压Vds 60 V
连续漏极电流Ids 160 A
输入电容Ciss 4520pF @50VVds
额定功率Max 230 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-262-3
长度 10.67 mm
高度 9.65 mm
封装 TO-262-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free