Trans MOSFET N-CH 40V 170A 3Pin2+Tab D2PAK Tube
Description
This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free
Typical Applications
• Industrial Motor Drive
额定电压DC 40.0 V
额定电流 170 A
通道数 1
漏源极电阻 3.6 mΩ
极性 N-Channel
耗散功率 200 W
产品系列 IRF2204S
阈值电压 4 V
输入电容 5890pF @25V
漏源极电压Vds 40 V
连续漏极电流Ids 170 A
上升时间 140 ns
输入电容Ciss 5890pF @25VVds
额定功率Max 200 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
高度 4.576 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRF2204SPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STB200NF04T4 意法半导体 | 功能相似 | IRF2204SPBF和STB200NF04T4的区别 |