MOSFET, Power; N-Ch; VDSS 55V; RDSON 2.6Milliohms; ID 75A; D2Pak; PD 330W; VGS +/-20
Specifically designed for Automotive applications, ID = 75 A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety
of other applications.
**Features**:
* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed Up to Tj Max.
* Lead-Free
漏源极电阻 3.3 mΩ
极性 N-Channel
耗散功率 300 W
产品系列 IRF3805S
输入电容 7960pF @25V
漏源极电压Vds 55 V
漏源击穿电压 55 V
连续漏极电流Ids 75.0 A
输入电容Ciss 7960pF @25VVds
额定功率Max 300 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRF3805SPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STB150NF55T4 意法半导体 | 功能相似 | IRF3805SPBF和STB150NF55T4的区别 |
STB160N75F3 意法半导体 | 功能相似 | IRF3805SPBF和STB160N75F3的区别 |
STB200NF04T4 意法半导体 | 功能相似 | IRF3805SPBF和STB200NF04T4的区别 |