IPB017N06N3GATMA1

INFINEON  IPB017N06N3GATMA1  晶体管, MOSFET, N沟道, 180 A, 60 V, 1.3 mohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB017N06N3GATMA1, 180 A, Vds=60 V, 7引脚 D2PAK TO-263封装

得捷:
MOSFET N-CH 60V 180A TO263-7

e络盟:
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0013 ohm, 10 V, 3 V

艾睿:
As an alternative to traditional transistors, the IPB017N06N3GATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 250000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

Chip1Stop:
Trans MOSFET N-CH 60V 180A 7-Pin6+Tab TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7

Verical:
Trans MOSFET N-CH 60V 180A 7-Pin6+Tab D2PAK T/R

Newark:
# INFINEON  IPB017N06N3GATMA1  MOSFET Transistor, N Channel, 180 A, 60 V, 1.3 mohm, 10 V, 3 V