MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160NC
**N-Channel Power MOSFET over 100A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH Si 30V 235A 3-Pin2+Tab D2PAK Tube
Allied Electronics:
MOSFET, N Ch., 30V, 260A, 2.4 MOHM, 160NC QG, D2-PAK, Pb-Free
Verical:
Trans MOSFET N-CH 30V 235A 3-Pin2+Tab D2PAK Tube
漏源极电阻 2.4 mΩ
极性 N-Channel
耗散功率 231 W
产品系列 IRF2903ZS
漏源极电压Vds 30 V
连续漏极电流Ids 260 A
上升时间 100 ns
输入电容Ciss 6320pF @25VVds
额定功率Max 231 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
封装 TO-263-3
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC