INFINEON IPB60R199CPATMA1 功率场效应管, MOSFET, N沟道, 16 A, 650 V, 0.18 ohm, 10 V, 3 V
The IPB60R199CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching topologies for server and telecom.
额定功率 139 W
针脚数 3
漏源极电阻 0.18 Ω
极性 N-Channel
耗散功率 139 W
阈值电压 3 V
漏源极电压Vds 650 V
连续漏极电流Ids 16A
上升时间 5 ns
输入电容Ciss 1520pF @100VVds
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 139000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 工业, Alternative Energy, Industrial, Communications & Networking, 电源管理, 通信与网络, Power Management, 替代能源, 消费电子产品, Consumer Electronics
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17