IRF1404ZLPBF

Trans MOSFET N-CH Si 40V 190A 3Pin3+Tab TO-262

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area.

Features

 Advanced Process Technology

 Ultra Low On-Resistance

 175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free

艾睿:
Trans MOSFET N-CH Si 40V 190A 3-Pin3+Tab TO-262

DeviceMart:
MOSFET N-CH 40V 120A TO-262