Trans MOSFET N-CH 55V 174A 3Pin3+Tab TO-273AA Tube
Description
Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche.
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Typical Applications
Industrial Motor Drive
额定电压DC 55.0 V
额定电流 174 A
漏源极电阻 5 mΩ
极性 N-Channel
耗散功率 330 W
产品系列 IRFBA1405P
输入电容 5480pF @25V
漏源极电压Vds 55 V
连续漏极电流Ids 174 A
上升时间 190 ns
输入电容Ciss 5480pF @25VVds
额定功率Max 330 W
下降时间 110 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 330000 mW
安装方式 Through Hole
引脚数 3
封装 TO-273-3
长度 11 mm
高度 15 mm
封装 TO-273-3
材质 Silicon
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free