单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
CoolMOS™C6/C7 功率 MOSFET
得捷:
MOSFET N-CH 600V 23.8A D2PAK
欧时:
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPB60R160C6ATMA1, 24 A, Vds=600 V, 3引脚 D2PAK TO-263封装
贸泽:
MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6
艾睿:
This IPB60R160C6ATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 176000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology.
TME:
Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3
Verical:
Trans MOSFET N-CH 600V 23.8A 3-Pin2+Tab D2PAK T/R
额定功率 176 W
通道数 1
漏源极电阻 140 mΩ
极性 N-Channel
耗散功率 176 W
阈值电压 2.5 V
输入电容 1660 pF
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 23.8A
上升时间 13 ns
输入电容Ciss 1660pF @100VVds
下降时间 8 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 176000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-3
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC