MOSFET, Power; N-Ch; VDSS 30V; RDSON 2.4Milliohms; ID 260A; TO-220AB; PD 290W; -55de
**N-Channel Power MOSFET over 100A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH Si 30V 260A 3-Pin3+Tab TO-220AB Tube
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 30V; RDSON 2.4Milliohms; ID 260A; TO-220AB; PD 290W; -55de
Verical:
Trans MOSFET N-CH 30V 260A 3-Pin3+Tab TO-220AB Tube
漏源极电阻 2.4 mΩ
极性 N-Channel
耗散功率 290 W
产品系列 IRF2903Z
输入电容 6320pF @25V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 75.0 A
输入电容Ciss 6320pF @25VVds
额定功率Max 290 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
高度 16.51 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRF2903ZPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
IRFZ14PBF 威世 | 功能相似 | IRF2903ZPBF和IRFZ14PBF的区别 |
STP200NF03 意法半导体 | 功能相似 | IRF2903ZPBF和STP200NF03的区别 |