INFINEON IPB50R140CPATMA1 晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
CoolMOS™CP 功率 MOSFET
得捷:
MOSFET N-CH 550V 23A TO263-3
立创商城:
N沟道 550V 23A
欧时:
Infineon CoolMOS CP 系列 Si N沟道 MOSFET IPB50R140CPATMA1, 23 A, Vds=550 V, 3引脚 D2PAK TO-263封装
贸泽:
MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP
e络盟:
功率场效应管, MOSFET, N沟道, 550 V, 23 A, 0.13 ohm, TO-263 D2PAK, 表面安装
艾睿:
Make an effective common gate amplifier using this IPB50R140CPATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 192000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with coolmos technology.
TME:
Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Verical:
Trans MOSFET N-CH 550V 23A 3-Pin2+Tab D2PAK T/R
Newark:
# INFINEON IPB50R140CPATMA1 MOSFET Transistor, N Channel, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
额定功率 25 W
通道数 1
针脚数 3
漏源极电阻 0.13 Ω
极性 N-Channel
耗散功率 192 W
阈值电压 3 V
漏源极电压Vds 550 V
漏源击穿电压 500 V
连续漏极电流Ids 23A
上升时间 14 ns
输入电容Ciss 2540pF @100VVds
下降时间 8 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 192 W
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-3
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Alternative Energy, Communications & Networking, 电源管理, Computers & Computer Peripherals, Power Management, 通信与网络, 替代能源, 消费电子产品, Consumer Electronics, 计算机和计算机周边
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17